3.  Block Diagram 

3-1  RF Block Diagram

Samsung Electronics

3-1

LNA

bias 
circuit

RX
SAW

LPF

RX
SAW
filter

IF
SAW
filter

/6

PLL1

Dual
synth.

PLL2

RF VCO

1160 ~ 1185 MHz

890 ~ 915 MHz

Ant S/W

P.A.

935 ~ 960 MHz

225 MHz

45 MHz

LMX2336L

VCTCXO
13MHz

TCO-999

LC
filter

I & Q
Demo.

45 MHz

270 MHz

HD 155101BF

540 MHz

270 MHz 

270 MHz 

270 MHz 

Phase
Detector

90 deg
Shift /2

90 deg
Shift /2

/2

Loop
filter

TX VCO

B.B.
Block

I

O

I

O

AGC

TX
SAW

I & Q

Mod

3-2

Samsung Electronics

3-2  Baseband Block Diagram

VCC

RTC VCC

LDO
Regulator

Ni_MH Battery (3.6V)

System
Clock

System
RAM 4M

System
memory

Flash
ROM 16M

EEPROM 128K

8M ROM (Voice 
Recognition)

KeyPad

Graphic LCD

SIM Card

B.B Interface

DC/DC
Converter

RF Interface

Serial Data
Interface

+3V SIM Card

+5V SIM Card

Battery Voltage

Battery 
Temperature

3V Tx

3V SYNTH

3V BRIGHT

AVCC

I/O Interface

A/D Interface

I/O BB Filter

AGC, AFC

PLL

LDO
Regulators

BB

3.0V

3.6V

3.6V

3.0V

RF

GSM/DCS

VOCODER

Memory

Charging Circuit

Li_lon Battery (3.6V)

GSM/DCS

KERNEL 5

3.3V

Samsung Electronics

3-3

3-3  DTC Block Diagram

CHOKE COIL

Switching TR

Circuit

UVLO

Overcurrent Protector

2nd Regulator

Reference 

Voltage

Overheat 

Protector

Feed Back

LED

MPU

Filter

FET Switch

INPUT

9V DC

FRT 4.1V

FET Switch

REAR 4.1V

 Static Current Circuit

 Static Voltage Circuit

Battery Type Detector

Charge Voltage Detector

Charge Voltage Selector

3-4

Samsung Electronics

Power

(12V-28V)

Ignition

Stabilizer

Power

Control

5V

Regulator

DC/DC

Regulator

Current

Detector

Voltage/Current

Feed Back

MICOM

DSP

CODEC

Volume

Calibration

EEPROM

Control

Audio

Amp

Speaker

Microphone

RX

Amp

TX

Amp

Data

Communication

Cradle

3-4  HFK Bloc

k Dia

gram