2000. 2. 28

1/2

SEMICONDUCTOR

TECHNICAL DATA

BC817

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.            
SWITCHING APPLICATION.                           

FEATURES                                       

ᴌComplementary to BC807.

MAXIMUM RATING  (Ta=25ᴱ)

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A
B
C

D
E

2.93   0.20

1.30+0.20/-0.15

0.45+0.15/-0.05
2.40+0.30/-0.20

G

1.90

H
J
K
L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

J

K

E

1

2

3

H

G

A

N

C

B

D

1.30 MAX

L

L

P

P

P

7

+_

ELECTRICAL CHARACTERISTICS  (Ta=25ᴱ)

Note : h

FE

Classification    16:100ᴕ250  ,  25:160ᴕ400   ,   40:250ᴕ630 

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN. 

TYP.

MAX.

UNIT

Collector Cut-off Current

I

CBO

V

CB

=20V,  I

E

=0

-

-

0.1

ỌA 

Emitter Cut-off Current

I

EBO

V

EB

=5V,  I

C

=0

-

-

0.1

ỌA

DC Current Gain (Note)

h

FE

(1)

V

CE

=1V,  I

C

=100mA

100

-

630

h

FE

(2)

V

CE

=1V,  I

C

=500mA

40

-

-

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

=500mA,  I

B

=50mA

-

-

0.7

V

Base-Emitter Voltage 

V

BE

V

CE

=1V,  I

C

=500mA

-

-

1.2

V

Transition Frequency

f

T

V

CE

=5V,  I

C

=10mA,  f=100MHz

100

-

-

MHz 

Collector Output Capacitance 

C

ob

V

CB

=10V,  I

E

=0, f=1MHz

-

5

-

pF

CHARACTERISTIC   

SYMBOL

RATING 

UNIT

Collector-Base Voltage

V

CBO

50

V

Collector-Emitter Voltage

V

CEO

45

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current 

I

C

800

mA

Emitter Current 

I

E

-800

mA

Collector Power Dissipation

P

C

*

350

mW

Junction Temperature

T

j

150

ᴱ

Storage Temperature Range

T

stg

-55ᴕ150

ᴱ

TYPE

BC817-16

BC817-25

BC817-40

MARK

6A

6B

6C

* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm. 

MARK SPEC

Type Name

Marking

Lot No.

2000. 2. 28

2/2

BC817

Revision No : 2

C

COLLECTOR CURRENT I     (mA)

0

P     (mW)

C

0

AMBIENT TEMPERATURE Ta (  C)

C

P    -  Ta

10

DC CURRENT GAIN h

FE

1k

300

3

1

COLLECTOR CURRENT I      (mA)

C

0

COLLECTOR-EMITTER VOLTAGE V      (V)

CE

CE

C

I    - V     (LOW VOLTAGE REGION)

h      -  I

1

COLLECTOR CURRENT I     (mA)

C

0.2

BASE-EMITTER VOLTAGE V       (V)

BE

I     -  V

STATIC CHARACTERISTICS

B

BASE CURRENT

0.8

1.0

I     (mA)

C

V           -  I

C

COLLECTOR CURRENT I      (mA)

1

3

300

1k

0.01

CE(sat)

COLLECTOR-EMITTER SATURATION

COLLECTOR CURRENT

BASE-EMITTER

BE

VOLTAGE V      (V)

I     (mA)

VOLTAGE V       (V)

COLLECTOR-EMITTER

CE

0.6

0.4

0.2

0

10

20

30

40

0.8

0.6

0.4

0.2

0

200

400

600

800

1k

COMMON

EMITTER
Ta=25  C

9

8

7

6

5

4

3

2

I   =1mA

0

B

V     =1V

CE

CE

V     =1V

1

2

3

4

5

6

200

400

600

800

1000

1200

8

7
6

5

4

3

2

0

I   =1mA

B

C

BE

0.4

0.6

0.8

1.0

3

10

30

100

300

1k

5k

COMMON EMITTER
V     =1V

CE

Ta=100 

 C

Ta=2

5  C

Ta=

-25  

C

FE

C

100

30

10

30

100

300

1k

3k

50

500

COMMON EMITTER
V     =1V

CE

Ta=100  C
Ta=25  C

Ta=-25  C

CE(sat)

C

VOLTAGE V              (V)

100

30

10

0.03

0.1

0.3

1

3

COMMON EMITTER
I   /I   =25

C B

Ta=1

00  

C

Ta=25  C

Ta=-25  C

CE

V     =5V

COMMON EMITTER

500

100

30

10

30

100

TRANSITION FREQUENCY

C

T

T

10

1k

300

3

1

COLLECTOR CURRENT I      (mA)

C

f     -  I

f     (MHz)

300

Ta=25  C

COLLECTOR POWER DISSIPATION

25

50

75

100

125

150

175

0

100

200

300

10

COMMON EMITTER
Ta=25  C

Ta=100  C