VP2020L, BSS92
Vishay Siliconix
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
www.vishay.com
11-1
P-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
VP2020L
–200
20 @ V
GS
= –4.5 V
–0.8 to –2.5
–0.12
BSS92
–200
20 @ V
GS
= –10 V
–0.8 to –2.8
–0.15
FEATURES
BENEFITS
APPLICATIONS
D
High-Side Switching
D
Secondary Breakdown Free: –220 V
D
Low On-Resistance: 11.5
W
D
Low-Power/Voltage Driven
D
Excellent Thermal Stability
D
Ease in Driving Switches
D
Full-Voltage Operation
D
Low Offset Voltage
D
Easily Driven Without Buffer
D
No High-Temperature
“Run-Away”
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D
Power Supply, Converters
D
Motor Control
D
Switches
“S” VP
2020L
xxyy
TO-92-18CD
(TO-18 Lead Form)
Top View
S
G
D
1
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
BSS92
VP2020L
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” BS
S92
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VP2020L
BSS92
Unit
Drain-Source Voltage
V
DS
–200
–200
Gate-Source Voltage
V
GS
"
20
"
20
V
_
T
A
= 25
_
C
–0.12
–0.15
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
–0.08
–0.09
A
Pulsed Drain Current
a
I
DM
–0.48
–0.6
T
A
= 25
_
C
0.8
1.0
Power Dissipation
T
A
= 100
_
C
P
D
0.32
0.4
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
125
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
VP2020L, BSS92
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VP2020L
BSS92
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source
V
GS
= 0 V, I
D
= –10
m
A
–220
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –250
m
A
–220
–200
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–1.9
–0.8
–2.5
–0.8
–2.8
V
DS
= 0 V, V
GS
=
"
20 V
"
10
"
100
Gate-Body Leakage
I
GSS
T
J
= 125
_
C
"
50
nA
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
–1
T
J
= 125
_
C
–100
Zero Gate Voltage
Drain Current
I
DSS
V
DS
= –200 V, V
GS
= 0 V
–60
m
A
Drain Current
DSS
T
J
= 125
_
C
–200
m
V
DS
= –60 V, V
GS
= 0 V
–0.2
On-State Drain Current
b
I
D(on)
V
DS
= –10 V, V
GS
= –4.5 V
–250
–100
mA
V
GS
= –10 V, I
D
= –0.1 A
11.5
20
V
GS
= –4.5 V, I
D
= –0.1 A
15
20
Drain-Source
On-Resistance
b
r
DS(on)
T
J
= 125
_
C
28
40
W
On-Resistance
b
DS(on)
V
GS
= –4.5 V, I
D
= –0.05 A
15
T
J
= 125
_
C
28
Forward
V
DS
= –10 V, I
D
= –0.1 A
170
100
Forward
Transconductance
b
g
fs
V
DS
= –25 V, I
D
= –0.1 A
170
60
mS
Diode Forward Voltage
V
SD
I
S
= –0.3 A, V
GS
= 0 V
–0.9
–1.2
V
Dynamic
Input Capacitance
C
iss
30
70
130
Output Capacitance
C
oss
V
DS
= –25 V, V
GS
= 0 V
f = 1 MHz
10
20
30
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
3
10
15
Switching
c
t
d(on)
6
10
Turn-On Time
t
r
V
DD
= –25 V, R
L
= 250
W
^
8
15
I
D
^
–0.1 A, V
GEN
= –10 V
W
ns
t
d(off)
D
GEN
R
G
= 25
W
18
30
Turn-Off Time
t
f
R
G
= 25
W
17
25
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VPDQ20
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
c.
Switching time is essentially independent of operating temperature.
VP2020L, BSS92
Vishay Siliconix
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
20
0
–4
–8
–12
–16
–20
18
16
14
12
10
8
–100
–80
–60
0
0
–1
–5
–40
–20
–2
–3
–4
–500
0
–1
–2
–3
–4
–5
–400
–300
–200
–100
0
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
V
GS
= –10 V
–5 V
–6 V
–55
_
C
T
J
= 125
_
C
V
DS
= –15 V
–0.02 A
I
D
= –0.1 A
T
J
– Junction Temperature (
_
C)
–4.5 V
–4 V
–3 V
–100
0
–0.4
–0.8
–1.2
–1.6
–2.0
–80
–60
–40
–20
0
V
GS
= –4 V
–3.6 V
–3 V
–2 V
V
GS
– Gate-Source Voltage (V)
–0.05 A
25
20
15
0
0
–50
–250
10
5
–100
–150
–200
V
GS
= –4.5 V
–10 V
2.25
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= –4.5 V
I
D
= –0.1 A
25
_
C
I
D
–
Drain Current (mA)
I
D
–
Drain Current (mA)
I
D
–
Drain Current (mA)
r
DS
(on)
–
On-Resistance (
Ω )
r
DS
(on)
–
Drain-Source On-Resistance (
Ω )
r
DS
(on)
–
Drain-Source On-Resistance (
Ω )
(
Normalized)
VP2020L, BSS92
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1.0
100
10
1 K
–10
–100
–1000
100
10
1
120
100
80
0
0
–10
–50
60
40
–20
–30
–40
20
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
– Square Wave Pulse Duration (sec)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
–55
_
C
Q
g
– Total Gate Charge (nC)
C
rss
C
oss
C
iss
V
DD
= –25 V
R
G
= 25
W
V
GS
= 0 to –10 V
t
d(on)
t
d(off)
t
r
t
f
T
J
= 150
_
C
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
–12
–10
–8
0
0
0.5
2.5
–6
–4
1.0
1.5
2.0
–2
I
D
= –0.1 A
V
DS
= –100 V
–160 V
–10.0
–1.0
–0.01
0
–3.5
–0.1
–1.0
–2.0
–3.0
V
DS
= –5 V
125
_
C
25
_
C
V
GS
= 0 V
f = 1 MHz
I
D
–
Drain Current (mA)
C
–
Capacitance (pF)
V
GS
–
Gate-to-Source V
oltage (V)
t
–
Switching T
ime (ns)