GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
600
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
10
A
P
tot
Total power dissipation
T
mb
25
-
50
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.0A; I
B
= 0.8A
-
5
V
I
csat
Collector saturation current
f = 16KHz
4.5
-
A
V
F
Diode forward voltage
I
F
= 4.5A
1.6
2.0
V
t
f
Fall time
I
Csat
= 4.0A; f = 16KHz
1.0
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
600
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
10
A
I
B
Base current (DC)
-
A
I
BM
Base current peak value
-
A
P
tot
Total power dissipation
Tmb
25
-
50
W
T
stg
Storage temperature
-65
150
T
j
Junction temperature
-
150
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
I
CE
Collector cut-off current
V
BE
= 0V; V
CE
= V
CESMmax
-
1.0
mA
I
CES
V
BE
= 0V; V
CE
= V
CESMmax
-
2.5
mA
T
j
= 125
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0A; I
C
= 100mA
-
V
L = 25mH
V
CEsat
Collector-emitter saturation voltages
I
C
= 4.0A; I
B
= 0.8A
-
5.0
V
V
BEsat
Base-emitter satuation voltage
I
C
= 4.0A; I
B
= 0.8A
-
1.5
V
h
FE
DC current gain
I
C
= 1.0A; V
CE
= 5V
8
V
F
Diode forward voltage
I
F
= 4.5A
1.6
2.0
V
f
T
Transition frequency at f = 5MHz
I
C
= 0.1A; V
CE
= 10V
3
-
MHz
C
c
Collector capacitance at f = 1MHz
V
CB
= 10V
110
-
pF
t
s
Switching times(16KHz line deflecton circuit)
Ic=4A,IB(end)=0.8A,VCC=105V
-
s
t
f
Turn-off storage time Turn-off fall time
Ic=4A,IB(end)=0.8A,VCC=105V
0.7
1.0
s
ELECTRICAL CHARACTERISTICS
TO-3PFM
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
2SD1911
Silicon Diffused Power Transistor
