1999. 8. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB598
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
ᴌLow Saturation Voltage
: V
CE(sat)
=-0.3V(Max.) at I
C
=-0.5A.
ᴌComplementary to KTD545.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-0.1
ỌA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
ỌA
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-50mA
70
-
400
h
FE
(2)
V
CE
=-2V, I
C
=-1A(Pulse)
30
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.15
-0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.85
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
-
180
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
25
-
pF
Note : h
FE
Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
ᴱ
Storage Temperature Range
T
stg
-55ᴕ150
ᴱ
