2000. 2. 28

1/2

SEMICONDUCTOR

TECHNICAL DATA

BC807

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.            
SWITCHING APPLICATION.                           

FEATURES                                       

ᴌComplementary to BC817.

MAXIMUM RATING  (Ta=25ᴱ)

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A
B
C

D
E

2.93   0.20

1.30+0.20/-0.15

0.45+0.15/-0.05
2.40+0.30/-0.20

G

1.90

H
J
K
L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

J

K

E

1

2

3

H

G

A

N

C

B

D

1.30 MAX

L

L

P

P

P

7

+_

ELECTRICAL CHARACTERISTICS  (Ta=25ᴱ)

Note : h

FE

Classification    16:100ᴕ250  ,  25:160ᴕ400   ,   40:250ᴕ630 

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN. 

TYP.

MAX.

UNIT

Collector Cut-off Current

I

CBO

V

CB

=-20V,  I

E

=0

-

-

-0.1

ỌA  

Emitter Cut-off Current

I

EBO

V

EB

=-5V,  I

C

=0

-

-

-0.1

ỌA  

DC Current Gain (Note)

h

FE

(1)

V

CE

=-1V,  I

C

=-100mA

100

-

630

h

FE

(2)

V

CE

=-1V,  I

C

=-500mA

40

-

-

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

=-500mA,  I

B

=-50mA

-

-

-0.7

V

Base-Emitter Voltage 

V

BE

V

CE

=-1V,  I

C

=-500mA

-

-

-1.2

V

Transition Frequency

f

T

V

CE

=-5V,  I

C

=-10mA, f=100MHz

80 

-

-

MHz 

Collector Output Capacitance 

C

ob

V

CB

=-10V,  I

E

=0, f=1MHz

-

9

-

pF

CHARACTERISTIC   

SYMBOL

RATING 

UNIT

Collector-Base Voltage

V

CBO

-50

V

Collector-Emitter Voltage

V

CEO

-45

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current 

I

C

-800

mA

Emitter Current 

I

E

800

mA

Collector Power Dissipation

P

C

*

350

mW

Junction Temperature

T

j

150

ᴱ

Storage Temperature Range

T

stg

-55ᴕ150

ᴱ

TYPE.

BC807-16

BC807-25

BC807-40

MARK

5A

5B

5C

* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm. 

MARK SPEC

Type Name

Marking

Lot No.

2000. 2. 28

2/2

BC807

Revision No : 2

C

COLLECTOR CURRENT I     (mA)

0

10

DC CURRENT GAIN h

FE

-1k

-300

-3

-1

COLLECTOR CURRENT I     (mA)

C

0

COLLECTOR-EMITTER VOLTAGE V       (V)

CE

CE

C

I    -V      (LOW VOLTAGE REGION)

h      -  I

-1

COLLECTOR CURRENT I      (mA)

C

-0.2

BASE-EMITTER VOLTAGE V       (V)

BE

I     -  V

STATIC CHARACTERISTICS

B

BASE CURRENT

-0.8

-1.0

I      (mA)

C

V           -  I

C

COLLECTOR CURRENT I      (mA)

-1

-3

-300

-1k

-0.01

CE(sat)

COLLECTOR-EMITTER SATURATION

COLLECTOR CURRENT

BASE-EMITTER

BE

VOLTAGE V       (V)

I     (mA)

VOLTAGE V      (V)

COLLECTOR-EMITTER

CE

-0.6

-0.4

-0.2

0

-10

-20

-30

-40

-0.8

-0.6

-0.4

-0.2

0

-200

-400

-600

-800

-1k

COMMON

EMITTER
Ta=25  C

-9

-8

-7

-6 -5

-4

-3

-2

I   =-1mA

0

B

V     =-1V

CE

CE

V     =-1V

-1

-2

-3

-4

-5

-6

-200

-400

-600

-800

-1000

-1200

-8

-7

-6
-5

-4

-3

-2

0

I    =-1mA

B

C

BE

-0.4

-0.6

-0.8

-1.0

-3

-10

-30

-100

-300

-1k

-5k

COMMON EMITTER
V     =-1V

CE

Ta=

100

  C

Ta=2

5  

C

Ta=-

25

  C

FE

C

-100

-30

-10

30

100

300

1k

3k

50

500

COMMON EMITTER
V     =-1V

CE

Ta=100  C

Ta=25  C

Ta=-25  C

CE(sat)

C

VOLTAGE V             (V)

-100

-30

-10

-0.03

-0.1

-0.3

-1

-3

COMMON EMITTER
I   /I   =25

C B

Ta=100  C

Ta=25  C

Ta=-25  C

CE

V     =-5V

COMMON EMITTER

500

100

30

-10

-30

-100

TRANSITION FREQUENCY

C

T

T

10

-1k

-300

-3

-1

COLLECTOR CURRENT I      (mA)

C

f     -  I

f     (MHz)

300

Ta=25  C

COMMON EMITTER
Ta=25  C

P     (mW)

C

0

AMBIENT TEMPERATURE Ta (  C)

C

P    -  Ta

COLLECTOR POWER DISSIPATION

25

50

75

100

125

150

175

0

100

200

300